A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET 


Vol. 15,  No. 4, pp. 211-216, Aug.  2008
10.3745/KIPSTA.2008.15.4.211


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  Abstract

In this paper we fabricated and measured the 0.26㎛NMOSFET with wet gate oxide and nitride oxide gate to compare that the charateristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve, charge trapping, and SILC(Stress Induced Leakage Current) using the HP4145 device tester. As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially hot carrier lifetime(nitride oxide gate device satisfied 30 years, but the lifetime of wet gate oxide was only 0.1 year), variation of Vg, charge to breakdown, electric field simulation and charge trapping etc.

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[IEEE Style]

H. S. Kim and C. H. Yi, "A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET," The KIPS Transactions:PartA, vol. 15, no. 4, pp. 211-216, 2008. DOI: 10.3745/KIPSTA.2008.15.4.211.

[ACM Style]

Hwan Seog Kim and Cheon Hee Yi. 2008. A Study on Characteristics of Wet Oxide Gate and Nitride Oxide Gate for Fabrication of NMOSFET. The KIPS Transactions:PartA, 15, 4, (2008), 211-216. DOI: 10.3745/KIPSTA.2008.15.4.211.

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